ABSTRACT:
In various industrial
applications, including aviation, electric vehicles, and drilling, the demand
for semiconductor devices and associated circuits with high thermal stability
is progressively increasing. Wide-bandgap semiconductor Gallium Nitride (GaN)
devices exhibit the advantages of fast
switching capability, low on-resistance, and the ability to operate at high
temperatures. These advantages have made them potential candidates for
integrated circuits in high-temperature environments in recent years. Lateral
GaN devices promote monolithic integration, which consequently increases power
density and reduces cost of cooling systems. Hence, it is worthwhile to
investigate the performance of GaN devices in high-temperature environments.
This review aims to present a thorough review of high-temperature
characteristics of GaN devices and integrated circuits. The performance of GaN
devices at high temperatures, such as threshold voltage,saturation
current and on-resistance, has been reviewed in
response to different structures. The underlying degradation mechanisms related
to the intrinsic properties of structures and fabrication technology are
discussed at high temperatures. The thermal performance of GaN small signal integrated circuits and power converters was
presented. This paper systematically examines the advantages and challenges of
GaN devices and integrated circuits at high temperature environments.
Keywords:
Gallium nitride; High temperature; Integrated
circuits; Thermal degradation
Cite This Article
SCIEPublish Style
Zhao K, Cao P, Jiao J, Xu Y, Li Z, Cui M, et al. Review of Gallium
Nitride Devices and Integrated Circuits at High Temperatures. High-Temperature Materials2025, 2, 10020. https://doi.org/10.70322/htm.2025.10020
AMA Style
Zhao K, Cao P, Jiao J, Xu Y, Li Z, Cui M, et al. Review of Gallium
Nitride Devices and Integrated Circuits at High Temperatures. High-Temperature Materials. 2025; 2(4):10020. https://doi.org/10.70322/htm.2025.10020