Fabrication of Gradient Structured (Ta_0.2Nb_0.2Ti_0.2Zr_0.2Hf_0.2)C-SiC Composites and Their High-Temperature Ablation Behavior

ABSTRACT: Porous high-entropy carbide ceramics (PHECs) exhibit excellent high-temperature stability and are considered promising candidates for thermal-protection applications. However, their interconnected pore structure facilitates oxygen ingress during ablation, resulting in accelerated oxidation and structural degradation. In this work, a gradient SiC-rich dense surface layer was constructed on porous (Ta_0.2Nb_0.2Ti_0.2Zr_0.2Hf_0.2)C ceramics through phenolic-resin infiltration, carbonization, and reactive melt infiltration (RMI) of silicon. The resulting composites exhibited a hierarchical architecture consisting of a dense SiC-rich surface layer and a porous interior. The initial pore structure strongly influenced molten-Si infiltration and reaction behavior, leading to an increase in the thickness of the SiC-rich dense layer from 33.3 to 121.2 μm with increasing porosity. During ablation, oxidation of SiC generated SiO₂, which interacted with refractory transition-metal oxides to form a SiO₂-rich composite oxide layer that effectively suppressed oxygen diffusion and enhanced oxidation resistance. Consequently, the oxide-layer thickness decreased from 121.4 to 35.2 μm, accompanied by a significant reduction in the mass ablation rate. Among all samples, HEC-SiC5 exhibited the best ablation resistance, with a mass ablation rate as low as 0.23 mg/s. This work establishes a direct correlation between substrate pore architecture, molten-Si infiltration behavior, dense-layer evolution, and ablation resistance, providing a practical strategy for the design of lightweight porous HEC-based thermal-protection materials.