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Open Access

Review

02 April 2025

Wide-Bandgap Semiconductors: A Critical Analysis of GaN, SiC, AlGaN, Diamond, and Ga2O3 Synthesis Methods, Challenges, and Prospective Technological Innovations

The increasing demand for high-performance Wide-Bandgap (WBG) semiconductors, including GaN, SiC, and emerging Ultrawide-Bandgap (UWBG) materials such as Ga2O3 and diamond, has driven significant advancements in epitaxial growth techniques. However, achieving scalability, defect-free growth, and sustainability remains a major challenge. This review systematically evaluates Molecular Beam Epitaxy (MBE), Metal-Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), and other novel growth and hybrid growth techniques, emphasizing energy efficiency, defect control, and environmental impact. Industry 4.0-driven AI-based process optimization and closed-loop recycling have emerged as transformative strategies, reducing waste and improving manufacturing efficiency. Key findings reveal that HVPE enables rapid defect-free GaN fabrication, Hot-Filament CVD enhances SiC growth with superior thermal properties, and Atomic Layer Epitaxy (ALE) achieves sub-nanometer precision crucial for next-generation quantum and RF applications. Despite these advancements, p-type doping in UWBG materials, substrate compatibility, and thermal management remain unresolved challenges. Future research must focus on scalable eco-friendly epitaxy, novel doping mechanisms, and policy-driven sustainability efforts. This review provides a comprehensive roadmap for sustainable WBG semiconductor manufacturing, bridging materials innovation, energy efficiency, and industrial adoption to support the next generation of power electronics and optoelectronics.

Keywords: Wide-bandgap semiconductors; Epitaxial growth; Ultrawide-bandgap semiconductors; Molecular beam epitaxy; Sustainability; Manufacturing
Open Access

Review

01 April 2025

Sustainable Manufacturing and Applications of Wide-Bandgap Semiconductors—A Review

Wide-bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are revolutionizing high-power electronics due to their superior thermal conductivity, breakdown voltage, and energy efficiency. These materials are critical in electric vehicles, renewable energy systems, and high-frequency applications like 5G infrastructure. However, their production processes are resource-intensive and present significant environmental challenges. This review evaluates recent advancements in sustainable WBG semiconductor manufacturing, focusing on low-energy epitaxial growth, closed-loop recycling, and the mitigation of toxic by-products. Additionally, it highlights the role of Industry 4.0 innovations, such as AI-driven process optimization and IoT-based resource management, in enhancing sustainability. The review identifies research gaps in cost reduction, alternative WBG materials like Gallium Oxide (Ga2O3) and Diamond, and scalable green manufacturing solutions. It underscores the necessity for industry-wide collaboration and regulatory frameworks to drive the adoption of eco-friendly semiconductor fabrication. The findings of this study provide a roadmap for advancing sustainability in WBG semiconductor production, ensuring their long-term viability in the transition toward energy-efficient technologies.

Keywords: Sustainability; Wide-bandgap semiconductors; Epitaxial growth techniques; Manufacturing
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